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PD- 91850C
IRF7220
HEXFET ? Power MOSFET
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
S
S
S
G
1
2
3
4
8
7
6
5
A
D
D
D
D
V DSS = -14V
R DS(on) = 0.012 ?
T op V ie w
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.
Absolute Maximum Ratings
SO-8
Parameter
Max.
Units
V DS
I D @ T A = 25°C
I D @ T A = 70°C
I DM
P D @T A = 25°C
P D @T A = 70°C
E AS
V GS
T J, T STG
Drain- Source Voltage
Continuous Drain Current, V GS @ -4.5V
Continuous Drain Current, V GS @ -4.5V
Pulsed Drain Current ?
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy ?
Gate-to-Source Voltage
Junction and Storage Temperature Range
-14
±11
±8.8
±88
2.5
1.6
0.02
110
± 12
-55 to + 150
V
A
W
W/°C
mJ
V
°C
Thermal Resistance
Parameter
Max.
Units
R θ JA
www.irf.com
Maximum Junction-to-Ambient ?
50
°C/W
1
7/16/99
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